Drain extended tunnel field effect transistor

ABSTRACT

A Drain Extended Tunnel FET (DeTFET) device is disclosed that outperforms state of art devices and can meet the requirements of High voltage/high power devices operating in the range of 5V-20V for System on Chip (SoC). The device comprises a P+ SiGe source with an N-type Si Epilayer sandwiched between SiGe source and the gate stack, which enables vertical tunneling of minority carriers from SiGe P+ source into N-Epi region under the influence of gate field. The area tunneling between SiGe source and Si Epi region breaks the barrier imposed by thermionic injection based carrier transport from source to channel, which exists in DeMOS devices known in the art. The disclosed device results in improved performance in respect of ON current, leakage, sub-threshold slope, breakdown voltage and RF characteristics making it attractive for SoC applications as compared to its state of the art counterparts.

RELATED APPLICATIONS

This application claims priority to Indian Patent Application No.201641006497 filed Feb. 25, 2016, which is incorporated herein byreference in its entirety.

TECHNICAL FIELD

The present disclosure relates to the field of semiconductor devices andnanotechnology. In particular, the present disclosure pertains to aDrain Extended Tunnel FET (DeTFET).

BACKGROUND

Background description includes information that may be useful inunderstanding the present invention. It is not an admission that any ofthe information provided herein is prior art or relevant to thepresently claimed invention, or that any publication specifically orimplicitly referenced is prior art.

Nano electronic devices are generally fabricated on semiconductorsubstrates as integrated circuits. A complementarymetal-oxide-semiconductor (CMOS) Field Effect Transistor (FET) is one ofthe core elements of an integrated circuit. Dimensions and operatingvoltages of CMOS transistors are continuously reduced, or scaled down,to obtain ever-higher performance and packaging density of theintegrated circuits.

Problem of increasing power consumption as CMOS transistors are scaleddown has been addressed by Fin Field Effect Transistors (FinFET) whereconducting channel is wrapped by a thin silicon “fin” that forms thebody of the device. However, FinFET technology has been predicted tobecome obsolete beyond 7 nm technology node, if not earlier, and ispotentially expected to be replaced by Tunnel FETs. Though Tunnel FETtechnology has shown a great potential to outperform FinFETs, it is yetto see the required industrial maturity for commercialization. However,as there is no other technology option present, Tunnel FETs haveacquired presence in the technology roadmap and is expected to be seenin semiconductor products after the year 2022.

High voltage/high power devices operating in the range of 5V-20V havebecome an essential need for System on Chip (SoC) designs. However, SoCdesign in FinFET and beyond FinFET nodes is an open question. Besidestechnological challenges, design rule limitations and lack of advanceESD protection concepts; absence of ultra-high voltage (UHV) deviceconcept for 5V-20V operations is the key limiter. Also, SoC designrequires integration of logic, analog, RF and high voltagefunctionalities on the same chip. This mandates processing of core,analog, RF and high voltage/high power devices in the same flow. Theother emerging application of tunnel FET like low power technology isInternet of Things, which requires integration of SoC and sensors. Inplanar CMOS, LDMOS or Drain extended MOS (DeMOS) devices are used forUHV applications, which cater to on-chip functionalities like highvoltage level shifters, line drivers, USB, RF power amplifier, chargepump camera flash and DC-DC convertor. Some such lateral power MOSFETsas known in the art are (a) LDMOS, (b) LDMOS without Field Oxideisolation, (c) LDMOS with deep drain, (d) Drain extended MOS, (e)non-STI Drain extended MOS, (f) LDMOS with embedded SCR, (g-h) non-STIDeMOS with P-island(s) in the drift region, (i j) non-STI DeMOS withlocal P-island(s) in the drift region and are illustrated in FIG. 1A toFIG. 1J respectively.

Similar power MOSFETs but with vertical schemes as known in the art areillustrated in FIG. 2A to FIG. 2D where (a) VDMOS, (b) D-MOSFET, (c)U-MOSFET and (d) Super Junction MOSFET are shown respectively.

Requirement of LDMOS or DeMOS like UHV devices in FinFET configurationhas been addressed up-to a certain extent. However, no such solutionshave been proposed for Tunnel FET technology, which, as stated above, isgoing to replace FinFET technology beyond 7 nm technology node.Envisioning such a scenario, there is requirement of a drain extendedhigh voltage/high power device for tunnel FET technologies.

All publications herein are incorporated by reference to the same extentas if each individual publication or patent application werespecifically and individually indicated to be incorporated by reference.Where a definition or use of a term in an incorporated reference isinconsistent or contrary to the definition of that term provided herein,the definition of that term provided herein applies and the definitionof that term in the reference does not apply.

In some embodiments, numerical parameters set forth in the writtendescription and attached claims are approximations that can varydepending upon the desired properties sought to be obtained by aparticular embodiment. In some embodiments, the numerical parametersshould be construed in light of the number of reported significantdigits and by applying ordinary rounding techniques. Notwithstandingthat the numerical ranges and parameters setting forth the broad scopeof some embodiments of the invention are approximations, the numericalvalues set forth in the specific examples are reported as precisely aspracticable. The numerical values presented in some embodiments of theinvention may contain certain errors necessarily resulting from thestandard deviation found in their respective testing measurements.

As used in the description herein and throughout the claims that follow,the meaning of “a,” “an,” and “the” includes plural reference unless thecontext clearly dictates otherwise. Also, as used in the descriptionherein, the meaning of “in” includes “in” and “on” unless the contextclearly dictates otherwise.

The recitation of ranges of values herein is merely intended to serve asa shorthand method of referring individually to each separate valuefalling within the range. Unless otherwise indicated herein, eachindividual value is incorporated into the specification as if it wereindividually recited herein. All methods described herein can beperformed in any suitable order unless otherwise indicated herein orotherwise clearly contradicted by context. The use of any and allexamples, or exemplary language (e.g. “such as”) provided with respectto certain embodiments herein is intended merely to better illuminatethe invention and does not pose a limitation on the scope of theinvention otherwise claimed. No language in the specification should beconstrued as indicating any non-claimed element essential to thepractice of the invention.

Groupings of alternative elements or embodiments of the inventiondisclosed herein are not to be construed as limitations. Each groupmember can be referred to and claimed individually or in any combinationwith other members of the group or other elements found herein. One ormore members of a group can be included in, or deleted from, a group forreasons of convenience and/or patentability. When any such inclusion ordeletion occurs, the specification is herein deemed to contain the groupas modified thus fulfilling the written description used in the appendedclaims.

OBJECTS OF THE INVENTION

An object of the present disclosure is to provide a high power/highvoltage device concept for 5V to 20V operations in System on Chip (SoC)designs.

Another object of the present disclosure is to provide a drain extendedhigh voltage/high power device design for tunnel FET technologies.

Another object of the present disclosure is to provide a device designthat incorporates vertical (area scaled) band-to-band tunneling ofcarriers from source to channel unlike thermionic injection of carriersin the prior art devices.

Yet another object of the present disclosure is to provide device designthat has higher ON current, lower OFF current (leakage), lower thresholdvoltage, steep sub-threshold slope, higher break down voltage with lowerON resistance, lower sub-threshold leakage, absence of channel lengthmodulation, drain induced barrier lowering, and improved RFcharacteristics as compared to state of art drain extended MOS/LDMOSdevices.

Another object of the present disclosure is to provide Drain extendedtunnel FET device (DeTFET) that has significantly better ON resistancefor a range of gate voltages, higher trans conductance, and orders ofmagnitude higher intrinsic transistor gain when compared withcounterpart/prior art designs.

Still another object of the present disclosure is to provide a devicethat has better scalability compared to state of art drain extendedMOS/LDMOS devices.

SUMMARY

Aspects of the present disclosure relate to Field Effect Transistor(FET) design concept—a Drain Extended Tunnel FET (DeTFET) design conceptto be specific that out performs state of art devices and can meet therequirements of high voltage/high power devices operating in the rangeof 5V-20V for System on Chip (SoC).

In an aspect, the proposed DeTFET device includes a drain region, asource region, and a channel region that is disposed between the sourceand the drain regions. The proposed DeTFET device further comprises agate stack over the three regions. In an aspect, the source side regionof the proposed device comprises P+ SiGe source with an N-type SiEpitaxial (Epi) region (or layer)(also interchangeably referred to asN-Epi layer) sandwiched between SiGe source and the gate stack to enablevertical or area tunneling of minority carriers from SiGe P+ source intoN-Epi region under the influence of gate field.

In an aspect, the proposed DeTFET device comprises a P-Well region (orsimply P-Well) of first conductivity type, and a N-well region (orsimply N-Well) of second conductivity type next to each other to form ajunction that is disposed vertically over a substrate. The DeTFET devicefurther includes a source region (also referred to as source and the twoterms used interchangeably) of the first conductivity type that ispartially disposed inside the P-Well region, and a drain region (alsoreferred to as drain and the two terms used interchangeably) of thesecond conductivity type that is partially disposed inside the N-Well,wherein the device further comprises an epitaxial layer of the secondconductivity type. The proposed DeTFET device further comprises a gatestack that is disposed over the epitaxial layer, the P-well, andpartially over the N-well.

In an aspect, the N-type Si Epi region sandwiched between SiGe sourceand the gate stack can enable vertical or area tunneling of minoritycarriers from SiGe P+ source into N-Epi region under the influence ofgate field. The mobile carriers after tunneling from source to theepitaxial region are drifted from epitaxial region to the N-Well. In anaspect, area tunneling between the SiGe source and the N-type Si Epiregion breaks the barrier imposed by thermionic injection based carriertransport from source to channel, which exists in DeMOS devices known inthe art.

In an aspect, under OFF state, conduction band of N-type Si Epi regionis not aligned with the valance band of SiGe P+ source, restrictingquantum mechanical tunneling from valance to conduction band. However,when ON, the alignment takes place under influence of the gate field,which enables vertical tunneling.

In an aspect, the disclosed design concept can result in improvedperformance in respect of ON current, leakage, sub-threshold slope,breakdown voltage, and RF characteristics, making the proposed devicemore attractive for SoC applications as compared to its state of the artcounterparts.

In an aspect, the disclosed DeTFET device does not show thresholdvoltage shift as a function of drain voltage. Therefore, there is nodrain induced barrier lowering (DIBL) in the disclosed DeTFET device,which exists in DeMOS devices known in the art. This can help scalingthe channel length further.

In an aspect, output characteristics of DeTFET in the saturation regionare almost flat unlike DeMOS device, which shows absence of channellength modulation in the proposed device. This is attributed totunneling nature of current injection, which makes the carrier injectionfrom source to drain almost independent of drain field.

In an aspect, the disclosed DeTFET device has higher output currentswing in for smaller range of input/gate voltage as compared to DeMOSdevice. In an aspect, the disclosed device offers better scalability ascompared to the DeMOS device. Furthermore, the proposed concept can beadopted by the discrete power MOSFET technologies as well.

In an aspect, the proposed DeTFET device can be a fin structure basedDeTFET device, which can enhance performance as the fin structure canresult in further increase in area of the tunneling or alternatively canhelp in scaling down the size without compromising the performance.

Various objects, features, aspects and advantages of the inventivesubject matter will become more apparent from the following detaileddescription of preferred embodiments, along with the accompanyingdrawing figures in which like numerals represent like components.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the present disclosure, and are incorporated in andconstitute a part of this specification. The description, serve toexplain the principles of the present disclosure.

FIGS. 1A to 1J illustrate few exemplary lateral power MOSFETs as knownin the art.

FIGS. 2A to 2D illustrate few exemplary power MOSFETs with verticalschemes as known in the art.

FIGS. 3A and 3B illustrate schematic view and RON vs. VBD trade-off ofstate of the art CMOS DeMOS device respectively.

FIG. 4A illustrates an exemplary schematic view of the disclosed Drainextended Tunnel FET in accordance with embodiments of the presentdisclosure.

FIG. 4B illustrates valance band energies vs. distance along the section‘A-A’ of FIG. 4A under ON and OFF states of the disclosed DeTFET devicein accordance with embodiments of the present disclosure.

FIG. 5 illustrates e-barrier tunneling rate and h-barrier tunneling ratearound SiGe source and Si Epi region in ON OFF state of the disclosedDeTFET device in accordance with embodiments of the present disclosure.

FIG. 6 illustrates drain current vs. gate voltage (ID-VG)characteristics of the disclosed DeTFET device as a function of gatemetal work function (WF) in accordance with embodiments of the presentdisclosure.

FIGS. 7A-7D illustrate comparison of I_(D)-V_(G) and I_(D)-V_(D)characteristics of the disclosed DeTFET device vis a vis state of artDeMOS device in accordance with embodiments of the present disclosure.

FIGS. 8A-8D illustrate comparison of switching, analog and RF figure ofmerit (FOM) parameters of the disclosed DeTFET device vis a vis state ofart DeMOS device in accordance with embodiments of the presentdisclosure.

FIG. 9 illustrates an exemplary isometric representation of thedisclosed design concept implemented in fin based device in accordancewith embodiments of the present disclosure.

FIG. 10A to FIG. 10C illustrate exemplary cross sectional details of thefin based DeTFET device of FIG. 10 in accordance with embodiments of thepresent disclosure.

DETAILED DESCRIPTION

The following is a detailed description of embodiments of the disclosuredepicted in the accompanying drawings. The embodiments are in suchdetail as to clearly the anticipated variations of embodiments; on thecontrary, the intention is to cover all modifications, equivalents, andalternatives falling within the spirit and scope of the presentdisclosure as defined by the appended claims.

Each of the appended claims defines a separate invention, which forinfringement purposes is recognized as including equivalents to thevarious elements or limitations specified in the claims. Depending onthe context, all references below to the “invention” may in some casesrefer to certain specific embodiments only. In other cases it will berecognized that references to the “invention” will refer to subjectmatter recited in one or more, but not necessarily all, of the claims.

Various terms as used herein are shown below. To the extent a term usedin a claim is not defined below, it should be given the broadestdefinition persons in the pertinent art have given that term asreflected in printed publications and issued patents at the time offiling.

The present disclosure relates to a Drain Extended Tunnel FET (DeTFET)design concept that out-performs state of art FET devices, and can meetthe essential requirements of high voltage/high power devices operatingin the range of 5V-20V for System on Chip (SoC) designs and addressesrequirement of beyond FinFET SOC applications.

In an aspect, the disclosed design concept utilizes band-to-bandtunneling of carriers from source to channel which, compared tothermionic injection in DeMOS devices, results in several advantagessuch as higher ON current, lower leakage with lower threshold voltage,steep sub-threshold slope, higher breakdown voltage with lower ONresistance, and improved RF characteristics; making the proposed devicemore attractive for SoC applications when compared to its state of theart counterpart. In an aspect, the present disclosure provides a fieldeffect transistor device comprising a source region of firstconductivity type, a drain region of second conductivity type, anepitaxial layer of the second conductivity type that is partiallydisposed over the source region; and a gate stack that is disposed overthe epitaxial layer, wherein gate field of the gate stack enablesvertical tunneling of carriers from the source region to the epitaxiallayer.

In an aspect, the proposed device can further include a P-Well region ofthe first conductivity type, and an N-well region of the secondconductivity type configured next to each other to form a junction overa substrate. In another aspect, the source region is partially disposedinside the P-Well region, and the drain region is partially disposedinside the N-Well region. In yet another aspect, the P-Well region andthe N-Well region are lightly doped, and the source region and the drainregion are heavily doped.

In another aspect, the gate stack can be disposed over the P-well andpartially over the N-well. The proposed device can further include achannel region that is configured between the source region and thedrain region, and wherein the carriers drift from the source region tothe channel region.

In an aspect, the proposed DeTFET device includes a drain region, asource region, and a channel region that is disposed between the sourceand the drain regions. The proposed DeTFET device further comprises agate stack over the three regions. In an aspect, the source side regionof the proposed device comprises P+ SiGe source with an N-type SiEpitaxial (Epi) region (or layer)(also interchangeably referred to asN-Epi layer) sandwiched between SiGe source and the gate stack to enablevertical or area tunneling of minority carriers from SiGe P+ source intoN-Epi region under the influence of gate field.

In an aspect, the proposed DeTFET device comprises a P-Well region offirst conductivity type, and a N-well region of second conductivity typenext to each to form a junction that is disposed vertically over asubstrate. The DeTFET device further includes a source region of thefirst conductivity type that is partially disposed inside the P-Well,and a drain region of the second conductivity type that is partiallydisposed inside the N-Well, wherein the device further comprises anepitaxial layer of the second conductivity type. The proposed DeTFETdevice further comprises a gate stack that is disposed over theepitaxial layer, the P-well, and partially over the N-well.

In an aspect, the disclosed design concept can be implemented in aplaner device as well as in a fin based device that can result infurther increase in area of the tunneling or alternatively can help inscaling down the size without compromising the performance.

In an aspect, one to one comparison of the proposed device has been done(subsequently) between the proposed invention (DeTFET) and the existingDeMOS device (which is a non-STI DeMOS device). FIGS. 3A and 3Billustrate schematic views of existing DeMOS device 300, and R_(ON) (ONresistance) vs. V_(BD)(Breakdown Voltage) trade-off for the existingDeMOS device 300.

FIG. 4A illustrates a schematic view of a planer Drain extended TunnelFET device 400 in accordance with embodiments of the present disclosure.In an aspect, the proposed device can include a drain side region (rightof ‘C-C’), a source side region (left of ‘B-B’), and a channel region(between ‘B-B’ & ‘C-C’). The proposed device 400 can incorporate aP-well region 412 of first conductivity type, and a N-well region 414 ofsecond conductivity type. The device 400 can further include a sourceregion 404 (such as P+ SiGe source region 404) of the first conductivitytype disposed partially in the P-well region 412, and a drain region 408of the second conductivity type disposed partially in the N-well. Theproposed device 400 can further include an epitaxial layer 402 (such asN-type Si Epitaxial (Epi) region/layer 402) of the second conductivitytype that is sandwiched between the source region 404 and a gate stack406, wherein the epitaxial layer 402 partially covers the source 404,and the gate stack 406 completely covers the epitaxial region 402.

In an aspect, the N-type Si Epi region 402 sandwiched between SiGesource 404 and the gate stack 406 can enable vertical or area tunnelingof minority carriers from SiGe P+ source 404 into N-Epi region 402 underthe influence of gate field. The mobile carriers after tunneling fromsource 404 to the epitaxial region 402 are drifted from epitaxial region402 to the N-Well 414. In an aspect, the area tunneling between the SiGesource 404 and the N-type Si Epi region 402 breaks the barrier imposedby thermionic injection based carrier transport from source to channel(which exists in DeMOS devices known in the art).

In an embodiment, the FET device 400 can include a substrate 410,wherein the P-Well 412 and the N-Well 414 are lightly doped andconfigured next to each other to forming a junction that is disposedvertically over the substrate 410. The source region 404 (alsointerchangeably referred to as source) can be a heavily doped firstconductivity type region that is partially disposed inside the P-Well412, and the drain region 408 (also interchangeably referred to asdrain) can be a heavily doped second conductivity type region that ispartially disposed inside the N-Well 414. In an aspect, the epitaxiallayer 402 can be of second conductivity type, and can be partiallydisposed over the source region 404. The gate 406 can be a stack ofdielectric and metal disposed over the epitaxial layer 402, the P-Well412.

Alternatively, and to make a complimentary device, region 412 can be alightly doped second conductivity type region (N-Well), region 414 canbe a lightly doped first conductivity type region (P-Well), The source404 can be a heavily doped second conductivity type region partiallydisposed inside the region 412, and the drain 408 can be a heavily dopedfirst conductivity type region partially disposed inside the region 414.The epitaxial layer 402 can be of first conductivity type, and can bepartially disposed over the source 404.

In an embodiment, the FET device 400 can further include shallow trenchisolation (STI) inside the N-Well region 414, which can extend from thedrain edge to partially under the gate stack 406. In an embodiment, theFET device 400 can have a channel region (B-B′ to C-C′) formed betweenthe epitaxial layer 402 and the N-Well 414 under the gate stack 406. Inanother embodiment, the FET device 400 can further include a shallowisland of first conductivity type inside the N-Well 414, wherein theshallow island can be configured between the drain edge and the gatestack 406.

In an embodiment, the epitaxial layer 402 can extend from the edge ofthe N-Well region 414 to partially cover the source 404. Further, therecan be a dielectric or semiconducting tunnel barrier inserted betweenthe source 404 and the epitaxial layer 402. The gate stack 406 canpartially cover the epitaxial layer 402, wherein portion of theepitaxial layer 402 that remains outside the gate 406 can get consumedby Silicidation.

In an embodiment, the substrate 410 can be either or a combination of asemiconductor and an insulator material, and the N-Well region 414 andthe P-Well region 412 can be of any or a combination of materialsselected from Si, SiGe, Ge, materials belonging to III-V group orIII-Nitride groups. The epitaxial layer 402 can be any one or acombination of materials selected out of Si, SiGe, Ge, materialsbelonging to III-V or III-Nitride groups, transition metaldichalcogenides, or other 2-Dimensional semiconductors.

In an embodiment, source 404 and epitaxial layer 402 can form ahetro-junction.

FIG. 4B illustrates valance band energies vs. distance along the section‘A-A’ of FIG. 4A under ON and OFF states of the disclosed DeTFET device400 and shows the principle of tunneling between the SiGe source 404 andthe N-Epi region 402, which breaks the barrier imposed by thermionicinjection based carrier transport from source to channel in case ofDeMOS devices. Under OFF state, conduction band of the N-Epi region 402is not aligned with the valance band of the SiGe P+ source 404,restricting quantum mechanical tunneling from valance to conductionband. However, the alignment is clearly evident under the influence ofgate field (ON state), which enables the vertical tunneling. In anaspect, the source 404 can have a lower bandgap than epitaxial region402. N-Well 414 region can have a higher bandgap than epitaxial region402 and P-Well 412.

FIG. 5 illustrates e-barrier tunneling rate and h-barrier tunneling ratearound SiGe source 404 and Si Epi region 402 in ON and OFF states of thedisclosed DeTFET device 400. As can be seen from FIG. 5, barriertunneling rate under ON state is over 10 orders of magnitude higher thanthe same under OFF state. Moreover, the BTBT under ON state takes placesacross the entire N-Epi region 402, sandwiched between SiGe source 404and gate 406; unlike point tunneling under OFF state condition.Tunneling nature of carrier injection, from source to channel, alongwith (i) over 10 orders of magnitude difference between barriertunneling rate under ON & OFF state and (ii) shift from point tunneling(OFF state) to area tunneling (ON state) leads to an excellent ON to OFFcurrent ratio with steep sub-threshold slope (ss)/early turn-on as isapparent from FIG. 6.

FIG. 6 illustrates drain current vs. gate voltage (ID-VG)characteristics of the disclosed DeTFET device 400 as a function of gatemetal work function (WF). For work function of 3.9 eV, proposed deviceis predicted to have OFF current (I_(OFF)) less than 1 pA/μm, thresholdvoltage (VT)=0.15V, sub-threshold slope less than 5 mV/decade and ONcurrent exceeding 300 mA/μm at VGS=0.5V.

FIGS. 7A-7D illustrate exemplary comparison of I_(D)-V_(D) andI_(D)-V_(G) characteristics of DeTFET 400 and DeMOS device 300. Withrespect to the FIGS. 7A-7D, it can be seen that the ON current and OFFcurrent of the proposed device are over 2 times higher and 8 times lowerrespectively than DeMOS device 300. It can further be seen that even forlower OFF current, the proposed DeTFET 400 has much smaller thresholdvoltage (0.15V) and significantly lower average SS (4 mV/dec, extractedover 6 orders of current) when compared to DeMOS device 300 (0.35V and65 mV/dec, respectively), which is attributed to tunneling nature ofcarrier injection from source to channel. It can further be seen thatDeTFET device 400 does not show threshold voltage shift as a function ofdrain voltage, unlike small shift present in DeMOS device 300characteristics, which reveals absence of drain induced barrier lowering(DIBL) in DeTFET device 400, unlike DeMOS 300. This can help scaling thechannel length further. It can further be seen that outputcharacteristics of DeTFET 400 in the saturation region is almost flatunlike DeMOS device 300, which shows absence of channel lengthmodulation in the proposed device. This is attributed to tunnelingnature of current injection, which makes the carrier injection fromsource to drain almost independent of drain field. It can further beseen that higher output current swing in DeTFET 400 for smaller range ofinput/gate voltage, compared to DeMOS device 300.

The differences and advantages presented above attributes tosignificantly reduced ON resistance of DeTFET device 400, for a widerange of gate voltage, compared to DeMOS device 300 as shown in FIG. 8A.Furthermore, DeTFET device 400 offers 1.5 times higher trans-conductanceand orders of magnitude higher intrinsic transistor gain compared toDeMOS device 300 as shown in FIG. 8B.

FIG. 8C and FIG. 8D show that the DeTFET device 400 offers bettercut-off frequency (F_(t)), maximum oscillation frequency (F_(max)) andRF power gain; however the peak with respect to gate voltage occurs atmuch lower gate voltages. This implies that at a given frequency and fora given output RF power level, required input power for DeTFET based RFpower amplifier (PA) would be significantly lower compared to the samedesigned using DeMOS device 300. Hence, one can expect proposed DeTFET400 based RF power amplifier (PA) to offer higher power added efficiencycompared to DeMOS 300 based RF PA.

According to one embodiment, source drain region can have a doping inthe range of 1e19 cm⁻³-1e22 cm⁻³. Similarly, N-Well/P-Well regions canhave a doping in the range of 1e14 cm⁻³-1e19 cm⁻³. In another aspect,the gate stack can include a dielectric and metal (or polysilicon/metal+polysilicon) stack.

FIG. 9 illustrates an exemplary implementation of the disclosed designconcept in a fin based DeTFET device 900 that can enhance theperformance as the fin structure can result in further increase in thearea of the tunneling or alternatively can help in scaling down the sizewithout compromising the performance. Depicted therein is an isometricview of the disclosed device 900. The device 900 can include a threedimensional nano sized structure configured over a Buried Oxide (BOX)902. In an embodiment, the three-dimensional nano sized structure can befin 904 as depicted in the exemplary illustration in FIG. 9. It is to beunderstood that though the present disclosure have been explained withreference to a fin shaped structure, the three dimensional nano sizedstructure can be of any other suitable shape such as a nano wire and allsuch variations are well within the scope of the present disclosure.

In an embodiment, fin structure 904 can include a source 906 and a drain908 at its two ends. Further there can be a gate stack 910 over the fin904. In an embodiment, the device 900 can include an N-type Si Epitaxialregion (not shown here) sandwiched between SiGe source 906 and gatestack 910. The N-type Si Epitaxial region sandwiched between the SiGesource 906 and the gate stack 910 can enable vertical or area tunnelingof minority carriers from SiGe P+ source 1006 into the N-Epi regionunder the influence of gate field.

Further details of the device 900 are shown in FIGS. 10A to 10C, whichshow the sectional view of the device 900 along sectional planes A-A,B-B, and C-C (FIG. 9) respectively.

FIG. 10A shows the sectional details along vertical plane A-A of FIG. 9.Depicted therein is that the fin structure 904 can include a substrate1002, a lightly doped first conductivity type region (P-Well) 1004 and asecond conductivity type region (N-Well) 1006—next to each other andforming junctions—disposed vertically over the substrate 1002. Thesource 906 can be a heavily doped first conductivity type regiondisposed above the P-Well 906 and the drain 908 can be a heavily dopedsecond conductivity type region disposed over the N-Well 1006. The part(1008) of the fin 904 between the source 906 and the drain 908 can be offirst conductivity type and can function as channel 1008. The epitaxiallayer 1010 can be of second conductivity type, partially disposed overand wrapping around the source 906. The epitaxial layer 1010 can extendfrom the junction between the source 906 and channel 1008 to edge of thegate 910 in the source region. As shown, the epitaxial layer 1010 can befully covered by the gate 910 sandwiched between the source 906 and thegate 910. Any extra length of the epitaxial layer 1010 that is notcovered by the gate 910 can get consumed by Silicidation. The gate 910can be a stack of dielectric and metal.

Alternatively and to make a complimentary device, the source 916 can beof second conductivity type (N+) and drain 908 of first conductivitytype (P+) with a lightly doped epitaxial layer 1010 that can be firstconductivity type (P+) partially overlapping the source 906. Further,the channel 1008 between the source and the drain can be lightly dopedfirst or second conductivity type (N or P). Likewise, region 1004 can bea lightly doped second conductivity type region (N-Well), region 1106can be a lightly doped first conductivity type region (P-Well),

FIG. 10B illustrates sectional details of the device 900 along sectionalplanes B-B (FIGS. 9 and 10A) in the source region. As shown, theepitaxial layer 1010 sandwiched between the source 906 and the gate 910,wraps around the source 906. As is apparent, vertical tunneling can takeplace throughout the circumferential area of the fin 904 thus enhancingthe performance and/or enabling scaling down of the device.

FIG. 10C illustrates sectional details of the device 900 along sectionalplanes C-C (FIGS. 9 and 10A) in the channel region. As shown, the gate910 is stacked directly over the channel 1008.

While the foregoing describes various embodiments of the invention,other and further embodiments of the invention may be devised withoutdeparting from the basic scope thereof. The scope of the invention isdetermined by the claims that follow. The invention is not limited tothe described embodiments, versions or examples, which are included toenable a person having ordinary skill in the art to make and use theinvention when combined with information and knowledge available to theperson having ordinary skill in the art.

Advantages of the Invention

The present disclosure provides a high power/high Voltage device conceptfor 5V to 20V operations in System on Chip (SoC) designs.

The present disclosure provides a drain extended high voltage/high powerdevice design for tunnel FET technologies.

The present disclosure provides a device design that incorporatesvertical (area scaled) band-to-band tunneling of carriers from source tochannel unlike thermionic injection of carriers in the prior artdevices.

The present disclosure provides device design that has higher ONcurrent, lower OFF current (leakage), lower threshold voltage, steepsub-threshold slope, higher break down voltage with lower ON resistanceand improved RF characteristics.

The present disclosure provides a device that has better scalabilitycompared to state of art devices.

1. A field effect transistor device comprising: a source region of firstconductivity type and a drain region of second conductivity type; anepitaxial layer of the second conductivity type that is partiallydisposed over the source region; and a gate stack that is disposed overthe epitaxial layer, wherein gate field enables vertical tunneling ofcarriers from the source region to the epitaxial layer.
 2. The fieldeffect transistor device of claim 1, wherein the device furthercomprises a P-Well region of the first conductivity type and a N-wellregion of the second conductivity type configured next to each other toform a junction over a substrate.
 3. The field effect transistor deviceof claim 2, wherein the source region is partially disposed inside theP-Well region, and the drain region is partially disposed inside theN-Well region.
 4. The field effect transistor device of claim 2, andwherein the P-Well region and the N-Well region are lightly doped, andwherein the source region and the drain region are heavily doped.
 5. Thefield effect transistor device of claim 1, wherein the gate stack isdisposed over the P-well and partially over the N-well.
 6. The fieldeffect transistor device of claim 1, wherein the device furthercomprises a channel region between the source region and the drainregion, and wherein the carriers drift from the source region to thechannel region.
 7. The device of claim 2, wherein the device furthercomprises a Shallow Trench Isolation (STI) inside the N-Well, andwherein the STI extends from edge of the drain region to partially underthe gate stack.
 8. The device of claim 2, wherein the device furthercomprises a shallow island of first conductivity type inside the N-Wellpositioned between edge of the drain region and the gate stack.
 9. Thedevice of claim 2, wherein the epitaxial layer extends from the edge ofthe N-Well to partially cover the source.
 10. The device of claim 2,wherein the gate stack covers the epitaxial layer partially, and whereinportion of the epitaxial layer that is outside the gate stack isconsumed by Silicidation.
 11. A field effect transistor devicecomprising: a fin structure comprising a source region of firstconductivity type and a drain region of second conductivity type at itstwo ends with a channel in between; channel further comprises a firstconductivity type (PC) and a second conductivity type regions (NC),disposed next to each other, wherein PC is between NC and source, and NCis between PC and drain; fin structure is disposed over a P-Well regionof the first conductivity type and a N-well region of the secondconductivity type, both disposed over a substrate, wherein the P-Wellregion and the N-Well region are configured next to each to form ajunction over a substrate; an epitaxial layer of the second conductivitytype that is partially disposed over the source region; and a gate stackthat is partially disposed over the fin structure, fully or partiallyencapsulates the epitaxial layer, fully encapsulates PC and partiallyencapsulates NC, wherein gate field enables vertical tunneling ofcarriers from the source region to the epitaxial layer.
 12. The deviceof claim 2, wherein the substrate is any or a combination of asemiconductor or an insulator.
 13. The device of claim 2, wherein theN-Well region or the P-Well region is made of any or a combination ofSi, SiGe, Ge, materials belonging to III-V or III-Nitride groups. 14.The device of claim 1, wherein the epitaxial layer is made of any or acombination of Si, SiGe, Ge, materials belonging to III-V or III-Nitridegroups, transition metal dichalcogenides or other 2-Dimensionalsemiconductors.
 15. The device of claim, wherein the source region has alower bandgap than the epitaxial layer.
 16. The device of claim 2,wherein the N-Well region has a higher bandgap than the epitaxial layerand the P-Well region.
 17. The device of claim 1, wherein the sourceregion and the epitaxial layer form a hetro-junction.
 18. The device ofclaim 1, wherein a dielectric or semiconducting tunnel barrier isinserted between the source region and the epitaxial layer.
 19. A fieldeffect transistor device that is complimentary to the device of claim 1.20. An integrated circuit comprising any or a combination of the fieldeffect transistor device of claim 1.